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| SKM 195GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 2 Trench IGBT Modules SKM 195GB126D SKM 195GAL126D Preliminary Data Inverse Diode Freewheeling Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL 1 11-09-2006 SEN (c) by SEMIKRON SKM 195GB126D ... Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 2 Trench IGBT Modules SKM 195GB126D SKM 195GAL126D Preliminary Data Freewheeling diode Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL 2 11-09-2006 SEN (c) by SEMIKRON SKM 195GB126D ... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 2 Trench IGBT Modules SKM 195GB126D SKM 195GAL126D Preliminary Data Zth(j-c)D Features Typical Applications GB GAL 3 11-09-2006 SEN (c) by SEMIKRON SKM 195GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 SEN (c) by SEMIKRON SKM 195GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 5 11-09-2006 SEN (c) by SEMIKRON SKM 195GB126D ... UL Regognized File no. E 63 532 6 11-09-2006 SEN (c) by SEMIKRON |
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